ENERGY-LEVELS IN SILICON

被引：200

作者：

CHEN, JW ^{[1
]}

MILNES, AG ^{[1
]}

机构：

[1] CARNEGIE MELLON UNIV,PITTSBURGH,PA 15213

来源：

ANNUAL REVIEW OF MATERIALS SCIENCE | 1980年 / 10卷

关键词：

D O I：

10.1146/annurev.ms.10.080180.001105

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：157 / 228

页数：72

共 50 条

[31] ENERGY-LEVELS IN HEAT-TREATED SAMARIUM-DOPED SILICON
VORONKOVA, GI
IGLITSYN, MI
SALMANOV, AR
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 9 (03): : 328 - 329
[32] ENERGY-LEVELS AND BINDING-ENERGIES OF ION-PAIRS IN SILICON
LEMKE, H
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1983, 76 (01): : 223 - 234
[33] MUONIUM ENERGY-LEVELS FOR =2
OWEN, DA
PHYSICS LETTERS B, 1973, B 44 (02) : 199 - 201
[34] ON THE ENERGY-LEVELS IN ANTIPROTONIC DEUTERIUM
WYCECH, S
GREEN, AM
NISKANEN, JA
PHYSICS LETTERS B, 1985, 152 (5-6) : 308 - 312
[35] ENERGY-LEVELS OF QUARK ATOMS
SHAW, GL
TIEN, J
PHYSICAL REVIEW D, 1993, 47 (11): : 5075 - 5078
[36] ENERGY-LEVELS OF CHROMIUM IN GAAS
MOROZOVA, VA
OSTROBORODOVA, VV
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1981, 15 (08): : 944 - 945
[37] Electron energy-levels in biochemistry
Baxter, S
Cassie, ABD
NATURE, 1941, 148 : 408 - 409
[38] ENERGY-LEVELS IN SILICON DOPED WITH TITANIUM DURING FLOATING-ZONE MELTING
AIVAZOV, AA
GIORGADZE, AL
ZEMKO, AE
PROKOFEVA, VK
SALMANOV, AR
KHASHIMOV, FR
INORGANIC MATERIALS, 1988, 24 (01) : 1 - 4
[39] ENERGY-LEVELS OF ANHARMONIC OSCILLATOR
MATHEWS, PM
ESWARAN, K
LETTERE AL NUOVO CIMENTO, 1972, 5 (01): : 15 - &
[40] DISLOCATION ENERGY-LEVELS IN GE
CAVALLINI, A
GONDI, P
CASTALDINI, A
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1977, 43 (02): : K205 - K208