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- [22] POSITIONS OF ENERGY-LEVELS OF ION-IMPLANTED IMPURITIES IN SILICON SOVIET PHYSICS SEMICONDUCTORS-USSR, 1974, 7 (10): : 1340 - 1341
- [23] ENERGY-DEPENDENCE OF DEFECT ENERGY-LEVELS IN ELECTRON-IRRADIATED SILICON REVUE DE PHYSIQUE APPLIQUEE, 1979, 14 (03): : 481 - 484
- [27] STRUCTURE AND ENERGY-LEVELS OF THE GLIDE 60-DEGREES PARTIAL IN SILICON PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1980, 101 (02): : 585 - 589
- [28] CALCULATION OF ENERGY-LEVELS OF A NEUTRAL VACANCY AND OF SELF-INTERSTITIALS IN SILICON JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1976, 9 (12): : 2319 - 2330
- [29] INFRARED LUMINESCENCE AND ENERGY-LEVELS OF DEEP CENTERS IN SILICON-CARBIDE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1976, 10 (06): : 668 - 670