POWER SWITCHING DEVICES

被引:0
|
作者
不详
机构
关键词
D O I
暂无
中图分类号
TH [机械、仪表工业];
学科分类号
0802 ;
摘要
引用
收藏
页码:160 / &
相关论文
共 50 条
  • [1] POWER SEMICONDUCTOR SWITCHING DEVICES - A COMPARISON BASED ON INDUCTIVE SWITCHING
    ADLER, MS
    WESTBROOK, SR
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (06) : 947 - 952
  • [2] INVESTIGATING POWER DEVICES FOR EMITTER SWITCHING.
    Dent, David
    1600, (19):
  • [3] GaN on Si Technologies for Power Switching Devices
    Ishida, Masahiro
    Ueda, Tetsuzo
    Tanaka, Tsuyoshi
    Ueda, Daisuke
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2013, 60 (10) : 3053 - 3059
  • [4] Recent Advances in GaN Power Switching Devices
    Tamura, Satoshi
    Anda, Yoshiharu
    Ishida, Masahiro
    Uemoto, Yasuhiro
    Ueda, Tetsuzo
    Tanaka, Tsuyoshi
    Ueda, Daisuke
    2010 IEEE COMPOUND SEMICONDUCTOR INTEGRATED CIRCUIT SYMPOSIUM (CSICS), 2010,
  • [5] Review on Semiconductor Pulsed Power Switching Devices
    Liang L.
    Yan X.
    Huang X.
    Qing Z.
    Yang Z.
    Shang H.
    Zhongguo Dianji Gongcheng Xuebao/Proceedings of the Chinese Society of Electrical Engineering, 2022, 42 (23): : 8631 - 8651
  • [6] Smart power devices in soft switching applications
    Belverde, G
    Galluzzo, A
    Melito, M
    Musumeci, S
    Raciti, A
    PESC 2000: 31ST ANNUAL IEEE POWER ELECTRONICS SPECIALISTS CONFERENCE, VOLS 1-3, 2000, : 1577 - 1582
  • [7] A Figure of Merit for Power FET Switching Devices
    Palmer, Patrick
    Shelton, Edward
    Carter, Jeff
    Louco, Lathom
    2022 IEEE ENERGY CONVERSION CONGRESS AND EXPOSITION (ECCE), 2022,
  • [8] MEASUREMENT OF INSTANTANEOUS LOSSES IN SWITCHING POWER DEVICES
    LOCCI, N
    MOCCI, F
    TOSI, M
    IEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREMENT, 1988, 37 (04) : 541 - 546
  • [9] A Calorimetry Based System for Measuring the Power Losses of Switching Power Devices
    Iero, Demetrio
    Della Corte, Francesco
    Merenda, Massimo
    APPLICATIONS IN ELECTRONICS PERVADING INDUSTRY, ENVIRONMENT AND SOCIETY, APPLEPIES 2016, 2018, 429 : 111 - 116
  • [10] AlGaN/GaN devices for future power switching systems
    Ueda, D
    Murata, T
    Hikita, M
    Nakazawa, S
    Kuroda, M
    Ishida, H
    Yanagihara, M
    Inoue, K
    Ueda, T
    Uemoto, Y
    Tanaka, T
    Egawa, T
    IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2005, TECHNICAL DIGEST, 2005, : 389 - 392