STUDY ON ANISTROPY OF EPITAXIAL-GROWTH OF GASEOUS GAAS

被引：0
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作者：
HOLLAN, L
SCHILLER, C
机构：
来源：
JOURNAL OF CRYSTAL GROWTH | 1971年 / 13卷 / MAY期
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中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
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页码：319 / &
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