STUDY ON ANISTROPY OF EPITAXIAL-GROWTH OF GASEOUS GAAS

被引：0

作者：

HOLLAN, L

SCHILLER, C

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1971年 / 13卷 / MAY期

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D O I：

暂无

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：319 / &

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