EFFECT OF NITRIDATION ON THE DENSITY OF INTERFACE STATES IN W-TI/N-GAAS SCHOTTKY DIODES

被引：5
|
作者：
CHEN, H [1 ]
SADWICK, LP [1 ]
SOKOLICH, M [1 ]
WANG, KL [1 ]
LARSON, RD [1 ]
CHI, TY [1 ]
机构：
[1] HUGHES AIRCRAFT CO,DIV MICROWAVE PROD,TORRANCE,CA 90509
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1989年 / 7卷 / 05期
关键词：
D O I：
10.1116/1.584557
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1096 / 1102
页数：7
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