EFFECT OF NITRIDATION ON THE DENSITY OF INTERFACE STATES IN W-TI/N-GAAS SCHOTTKY DIODES

被引：5

作者：

CHEN, H ^{[1
]}

SADWICK, LP ^{[1
]}

SOKOLICH, M ^{[1
]}

WANG, KL ^{[1
]}

LARSON, RD ^{[1
]}

CHI, TY ^{[1
]}

机构：

[1] HUGHES AIRCRAFT CO,DIV MICROWAVE PROD,TORRANCE,CA 90509

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1989年 / 7卷 / 05期

关键词：

D O I：

10.1116/1.584557

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1096 / 1102

页数：7

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