Abrupt conduction band shifts in strained quantum wells

被引：0
|
作者：
Batson, PE
机构：
来源：
ELECTRON MICROSCOPY AND ANALYSIS 1995 | 1995年 / 147卷
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中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
ADF Imaging and spatially resolved EELS are used to obtain information about the atomic and electronic structure of Ge-Si quantum well structures. Within the regions which are homogeneous at the 10nm length scale, the obtained bandstructure follows the composition and strain as expected. Within 0.5-1.0 nm of strained interfaces, however, the obtained conduction bandstructure is sharper than the composition profile suggests that it ought to be. I will offer some speculation as to the reasons for this behavior.
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页码：169 / 174
页数：6
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