PULSED UV LASER PHOTOCHEMICAL DOPING OF SEMICONDUCTORS

被引：0
|
作者：
DEUTSCH, TF [1 ]
EHRLICH, DJ [1 ]
TURNER, GW [1 ]
FAN, JCC [1 ]
OSGOOD, RM [1 ]
机构：
[1] MIT,LINCOLN LAB,LEXINGTON,MA 02173
来源：
IEEE JOURNAL OF QUANTUM ELECTRONICS | 1981年 / 17卷 / 12期
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：110 / 110
页数：1
相关论文
共 50 条
  • [1] OHMIC CONTACT FORMATION ON INP BY PULSED LASER PHOTOCHEMICAL DOPING
    DEUTSCH, TF
    EHRLICH, DJ
    OSGOOD, RM
    LIAU, ZL
    APPLIED PHYSICS LETTERS, 1980, 36 (10) : 847 - 849
  • [2] SURFACE DOPING OF SEMICONDUCTORS BY PULSED-LASER IRRADIATION IN REACTIVE ATMOSPHERE
    BENTINI, GG
    BIANCONI, M
    SUMMONTE, C
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1988, 45 (04): : 317 - 324
  • [3] LASER DOPING OF SEMICONDUCTORS
    SIGMON, TW
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (8B) : C432 - C432
  • [4] OPTIMIZATION OF THE PARAMETERS INVOLVED IN THE PHOTOCHEMICAL DOPING OF SI WITH A PULSED ARF EXCIMER LASER
    FOULON, F
    SLAOUI, A
    FOGARASSY, E
    STUCK, R
    FUCHS, C
    SIFFERT, P
    APPLIED SURFACE SCIENCE, 1989, 36 (1-4) : 384 - 393
  • [5] ULTRAVIOLET (UV) PHOTOCHEMICAL DOPING OF SILICON
    IBBS, KG
    LLOYD, ML
    CHAD, RJ
    PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS, 1983, 369 : 361 - 364
  • [6] SURFACE DOPING OF SEMICONDUCTORS BY PULSED-LASER IRRADIATION IN REACTIVE ATMOSPHERE.
    Bentini, G.G.
    Bianconi, M.
    Summonte, C.
    Applied physics. A, Solids and surfaces, 1988, A45 (04): : 317 - 324
  • [7] Photochemical modification of a diamond surface using a pulsed UV laser as the energy source
    Silva, Mariana
    Santos, Nadia E.
    Pinto, Mariana
    Guieu, Samuel
    Oliveira, Ricardo
    Figueira, Flavio
    Paz, Filipe A. Almeida
    Neto, Miguel
    Rino, Luis
    Deuermeier, Jonas
    Maradiya, Milan
    Liehr, Michael
    Mendes, Joana C.
    Braga, Susana S.
    DIAMOND AND RELATED MATERIALS, 2024, 147
  • [8] Pulsed UV-Laser Processing of Amorphous and Crystalline Group IV Semiconductors
    Chiussi, S.
    Gontad, F.
    Stefanov, S.
    Conde, J. C.
    Lopez, E.
    Serra, C.
    Benedetti, A.
    Serra, J.
    Leon, B.
    Gonzalez, P.
    ULSI PROCESS INTEGRATION 7, 2011, 41 (07): : 315 - 330
  • [9] EFFICIENCY OF LASER DOPING OF SEMICONDUCTORS
    GORIN, EA
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1984, 18 (09): : 1062 - 1063
  • [10] PULSED LASER ANNEALING OF SEMICONDUCTORS
    WHITE, CW
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1980, 25 (03): : 224 - 225
12345