PULSED LASER ANNEALING OF SEMICONDUCTORS

被引：0

作者：

WHITE, CW ^{[1
]}

机构：

[1] OAK RIDGE NATL LAB,OAK RIDGE,TN 37830

来源：

BULLETIN OF THE AMERICAN PHYSICAL SOCIETY | 1980年 / 25卷 / 03期

关键词：

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：224 / 225

页数：2

共 50 条

[1] MELTING PHENOMENA AND PULSED-LASER ANNEALING IN SEMICONDUCTORS
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[J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (12) : 7121 - 7128
[2] PULSED CO2-LASER ANNEALING OF SEMICONDUCTORS
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[J]. SEMICONDUCTORS AND SEMIMETALS, 1984, 23 : 555 - 623
[3] PULSED LASER ANNEALING OF SEMICONDUCTORS EXPERIMENTAL FACTS AND OPEN QUESTIONS
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[J]. PHYSICA B & C, 1983, 117 (MAR): : 1010 - 1013
[4] IMPURITY DIFFUSION IN SEMICONDUCTORS UNDER PULSED LASER ANNEALING CONDITIONS
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[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1990, 24 (10): : 1141 - 1143
[5] EFFECTS OF AMBIPOLAR EXCESS CARRIER DIFFUSION IN PULSED LASER ANNEALING OF SEMICONDUCTORS
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[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1981, 17 (12) : 94 - &
[6] PULSED LASER-ANNEALING BEHAVIOR OF ION-IMPLANTED SEMICONDUCTORS
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[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (08) : C361 - C361
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[J]. NATURE, 1978, 276 (5689) : 668 - 669
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[J]. JOURNAL OF THE OPTICAL SOCIETY OF AMERICA, 1979, 69 (10) : 1461 - 1461
[9] PULSED LASER ANNEALING OF SINGLE-CRYSTAL AND ION-IMPLANTED SEMICONDUCTORS
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[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1982, 18 (02) : 224 - 232
[10] LASER ANNEALING OF IMPLANTED SEMICONDUCTORS
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