PULSED LASER ANNEALING OF SEMICONDUCTORS EXPERIMENTAL FACTS AND OPEN QUESTIONS

被引：5

作者：

KURZ, H ^{[1
]}

LIU, JM ^{[1
]}

BLOEMBERGEN, N ^{[1
]}

机构：

[1] HARVARD UNIV,CAMBRIDGE,MA 02138

来源：

PHYSICA B & C | 1983年 / 117卷 / MAR期

关键词：

D O I：

10.1016/0378-4363(83)90722-2

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：1010 / 1013

页数：4

共 50 条

[1] PULSED LASER ANNEALING OF SEMICONDUCTORS
WHITE, CW
[J]. BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1980, 25 (03): : 224 - 225
[2] THEORETICAL AND EXPERIMENTAL INVESTIGATION OF THE DYNAMICS OF PULSED LASER ANNEALING OF ION-IMPLANTED SEMICONDUCTORS
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[J]. JOURNAL OF METALS, 1983, 35 (12): : 47 - 47
[3] MELTING PHENOMENA AND PULSED-LASER ANNEALING IN SEMICONDUCTORS
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[J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (12) : 7121 - 7128
[4] PULSED CO2-LASER ANNEALING OF SEMICONDUCTORS
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[J]. SEMICONDUCTORS AND SEMIMETALS, 1984, 23 : 555 - 623
[5] IMPURITY DIFFUSION IN SEMICONDUCTORS UNDER PULSED LASER ANNEALING CONDITIONS
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[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1990, 24 (10): : 1141 - 1143
[6] EFFECTS OF AMBIPOLAR EXCESS CARRIER DIFFUSION IN PULSED LASER ANNEALING OF SEMICONDUCTORS
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[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1981, 17 (12) : 94 - &
[7] PULSED LASER-ANNEALING BEHAVIOR OF ION-IMPLANTED SEMICONDUCTORS
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FOTI, G
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CAMPISANO, SU
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (08) : C361 - C361
[8] SPIN-GLASSES - EXPERIMENTAL FACTS, THEORETICAL CONCEPTS, AND OPEN QUESTIONS
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YOUNG, AP
[J]. REVIEWS OF MODERN PHYSICS, 1986, 58 (04) : 801 - 976
[9] LASER ANNEALING OF SEMICONDUCTORS
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[J]. NATURE, 1978, 276 (5689) : 668 - 669
[10] LASER ANNEALING OF SEMICONDUCTORS
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[J]. JOURNAL OF THE OPTICAL SOCIETY OF AMERICA, 1979, 69 (10) : 1461 - 1461

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