AU-SI DIFFUSION SIZE EFFECT

被引：8
|
作者：
VAISLEIB, AV
GOLDINER, MG
机构：
[1] Centre of Scientific Research, Investigation Automation and Metrology, Moldavian Academy of Sciences, Kishinev, 277028
来源：
PHYSICS LETTERS A | 1990年 / 146卷 / 7-8期
关键词：
D O I：
10.1016/0375-9601(90)90722-Z
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Using the dissociative model, diffusion of Au atoms into Si plate has been investigated for temperatures below 1270 K. It is shown that, as the plate thickness decreases, the interstitial regime can change into the vacancy regime of diffusion transfer. © 1990.
引用
收藏
页码：421 / 425
页数：5
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