SI DEFECT INDUCED AU-SI DIFFUSION SIZE EFFECTS

被引：4
|
作者：
VAISLEIB, AV
GOLDINER, MG
KELOGLU, OY
KOTOV, IN
机构：
[1] ACAD SCI MOSSR,CTR SCI RES AUTOMAT & METROL,KISHINEV 277028,MOLDAVIA,USSR
[2] ACAD SCI MOSSR,INST CHEM,KISHINEV 277028,MOLDAVIA,USSR
来源：
JOURNAL OF APPLIED PHYSICS | 1991年 / 70卷 / 11期
关键词：
D O I：
10.1063/1.350368
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Diffusion of gold into silicon crystal has been investigated, taking into account both the dissociative and the kickout mechanisms. Expressions for the determination of critical sample thicknesses and temperatures at which one transfer mechanism substitutes for the other have been derived. Fields of different Au-Si diffusion transfer regime realization are defined.
引用
收藏
页码：6809 / 6814
页数：6
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