NEW METHOD FOR EXTRACTION OF EFFECTIVE CHANNEL LENGTH IN SUBMICRON MOSFETS

被引：1
|
作者：
INIEWSKI, K
SALAMA, CAT
机构：
[1] Department of Electrical Engineering, University of Toronto, Toronto
来源：
ELECTRONICS LETTERS | 1991年 / 27卷 / 06期
关键词：
FIELD EFFECT TRANSISTORS; TRANSISTORS; SEMICONDUCTOR DEVICES AND MATERIALS;
D O I：
10.1049/el:19910319
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A new method for effective channel length extraction in submicron MOSFETs is presented. It is based on measurements of the saturation voltage V(DSAT) in devices with different channel lengths. The method has been tested using submicron double diffused drain (DDD) MOS devices.
引用
收藏
页码：508 / 509
页数：2
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