IRON DOPING - A TOOL TO IMPROVE THE ELECTRICAL-PROPERTIES OF HG1-XZNXSE

被引：2
|
作者：
DOBROWOLSKI, W
GRODZICKA, E
KOSSUT, J
WITKOWSKA, B
机构：
[1] Inst. of Phys., Polish Acad. of Sci., Warsaw
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1993年 / 8卷 / 01期
关键词：
D O I：
10.1088/0268-1242/8/1S/008
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We present results of measurements of electron concentration and mobility in mixed crystals of Hg1-xZnxSe (0 less-than-or-equal-to x less-than-or-equal-to 0.07) doped with resonant Fe donors (0 less-than-or-equal-to n(Fe) less-than-or-equal-to 5 x 10(19) cm-3) from liquid helium to room temperature. The data indicate that the presence of Fe considerably improves the electrical properties of the material. The analysis of the mobility in terms of the scattering from ionized centres (with possible spatial correlation of impurity charges taken into account) and alloy scattering leads to an agreement between the measured data and the calculated values.
引用
收藏
页码：S33 / S36
页数：4
相关论文
共 50 条
  • [1] IMPROVEMENT OF ELECTRICAL-PROPERTIES OF HG1-XZNXSE UPON DOPING WITH FE
    DOBROWOLSKI, W
    GRODZICKA, E
    KOSSUT, J
    WITKOWSKA, B
    ACTA PHYSICA POLONICA A, 1992, 82 (04) : 681 - 684
  • [2] CHARACTERIZATION OF DIRECTIONALLY SOLIDIFIED HG1-XZNXSE SEMICONDUCTING ALLOYS
    COBB, SD
    ANDREWS, RN
    SZOFRAN, FR
    LEHOCZKY, SL
    JOURNAL OF CRYSTAL GROWTH, 1991, 110 (03) : 415 - 422
  • [3] Microstructural development of directionally solidified Hg1-xZnxSe alloys
    Cobb, SD
    Szofran, FR
    Jones, KS
    Lehoczky, SL
    JOURNAL OF ELECTRONIC MATERIALS, 1999, 28 (06) : 732 - 739
  • [4] TRANSPORT-PROPERTIES OF HG1-XZNXSE AND HG1-XMNXSE DOPED WITH FE RESONANT DONORS
    DOBROWOLSKI, W
    GALAZKA, RR
    GRODZICKA, E
    KOSSUT, J
    WITKOWSKA, B
    PHYSICAL REVIEW B, 1993, 48 (24): : 17848 - 17860
  • [5] MOLECULAR-BEAM EPITAXIAL-GROWTH AND SEGREGATION OF HG1-XZNXSE ALLOYS
    EINFELDT, S
    LUNZ, U
    HEINKE, H
    BECKER, CR
    LANDWEHR, G
    JOURNAL OF CRYSTAL GROWTH, 1995, 146 (1-4) : 427 - 432
  • [6] Correlation between crystal defects and the band gap of epitaxially grown Hg1-xZnxSe on GaAs(001)
    Behr, T
    Einfeldt, S
    Hommel, D
    Becker, CR
    Landwehr, G
    Cerva, H
    JOURNAL OF CRYSTAL GROWTH, 1996, 159 (1-4) : 1123 - 1127
  • [7] MAGNETIC AND ELECTRICAL-PROPERTIES OF HG1-XEUX TE AND HG1-XEUXSE
    KRYLOV, KR
    PONOMAREV, AI
    TSIDILKOVSKII, IM
    GAVALESHKO, NP
    KHOMYAK, VV
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1989, 23 (03): : 268 - 270
  • [8] THE ELECTRICAL-PROPERTIES OF METALLIC CONTACTS ON HG1-XCDX TE
    SPICER, WE
    FRIEDMAN, DJ
    CAREY, GP
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1988, 6 (04): : 2746 - 2751
  • [9] ANNEALING AND ELECTRICAL-PROPERTIES OF HG1-XCDXTE GROWN BY OMVPE
    PARAT, KK
    TASKAR, NR
    BHAT, IB
    GHANDHI, SK
    JOURNAL OF CRYSTAL GROWTH, 1990, 106 (04) : 513 - 523
  • [10] ELECTRICAL-PROPERTIES OF IN/YB/N-HG1-XCDXTE CONTACTS
    LEECH, PW
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 1994, 5 (04) : 226 - 228
12345