IMPROVEMENT OF ELECTRICAL-PROPERTIES OF HG1-XZNXSE UPON DOPING WITH FE

被引：0
|
作者：
DOBROWOLSKI, W
GRODZICKA, E
KOSSUT, J
WITKOWSKA, B
机构：
来源：
ACTA PHYSICA POLONICA A | 1992年 / 82卷 / 04期
关键词：
D O I：
10.12693/APhysPolA.82.681
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Results of measurements of electron concentration and mobility in mixed crystals of Hg1-xZnxSe (0 less-than-or-equal-to x less-than-or-equal-to 0.07) doped with resonant Fe donors (0 less-than-or-equal-to n(Fe) less-than-or-equal-to 5 X 10(19) cm-3) at liquid helium temperatures are presented. The data show that there is a considerable improvement of the electrical properties of the material when Fe impurities are present. The analysis of the mobility in terms of the scattering from ionized centers (accounting for possible spatial correlation of impurity charges) and the alloy scattering is iu agreement with the measured data.
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页码：681 / 684
页数：4
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