IRON DOPING - A TOOL TO IMPROVE THE ELECTRICAL-PROPERTIES OF HG1-XZNXSE

被引：2
|
作者：
DOBROWOLSKI, W
GRODZICKA, E
KOSSUT, J
WITKOWSKA, B
机构：
[1] Inst. of Phys., Polish Acad. of Sci., Warsaw
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1993年 / 8卷 / 01期
关键词：
D O I：
10.1088/0268-1242/8/1S/008
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We present results of measurements of electron concentration and mobility in mixed crystals of Hg1-xZnxSe (0 less-than-or-equal-to x less-than-or-equal-to 0.07) doped with resonant Fe donors (0 less-than-or-equal-to n(Fe) less-than-or-equal-to 5 x 10(19) cm-3) from liquid helium to room temperature. The data indicate that the presence of Fe considerably improves the electrical properties of the material. The analysis of the mobility in terms of the scattering from ionized centres (with possible spatial correlation of impurity charges taken into account) and alloy scattering leads to an agreement between the measured data and the calculated values.
引用
收藏
页码：S33 / S36
页数：4
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