COMPARISON OF INTERDIFFUSION BEHAVIOR IN MO-SI AND TI-SI MULTILAYERS

被引：1

作者：

BAI, HY ^{[1
]}

WANG, WH ^{[1
]}

CHEN, H ^{[1
]}

ZHANG, Y ^{[1
]}

WANG, WK ^{[1
]}

机构：

[1] ACAD SINICA,INT CTR MAT,SHENYANG 110015,PEOPLES R CHINA

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1993年 / 136卷 / 02期

关键词：

D O I：

10.1002/pssa.2211360214

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The interdiffusion of Mo-Si and Ti-Si multilayers is investigated by an in situ X-ray diffraction technique. It is found that the behavior of the interdiffusion in both multilayers is quite different. Both positive and negative interdiffusion take place in Ti-Si multilayers during annealing, while only positive interdiffusion occurs in Mo-Si multilayers. Accompanying interdiffusion, the process of solid state amorphization reaction plays a dominant role in Ti-Si multilayers, on the contrary, the crystallization process was the main process in Mo-Si multilayers. In addition, a transient amorphization process at early stage of annealing is observed in Mo-Si multilayers for the first time.

引用

页码：411 / 421

页数：11

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