COMPARISON OF INTERDIFFUSION BEHAVIOR IN MO-SI AND TI-SI MULTILAYERS

被引：1
|
作者：
BAI, HY [1 ]
WANG, WH [1 ]
CHEN, H [1 ]
ZHANG, Y [1 ]
WANG, WK [1 ]
机构：
[1] ACAD SINICA,INT CTR MAT,SHENYANG 110015,PEOPLES R CHINA
来源：
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1993年 / 136卷 / 02期
关键词：
D O I：
10.1002/pssa.2211360214
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The interdiffusion of Mo-Si and Ti-Si multilayers is investigated by an in situ X-ray diffraction technique. It is found that the behavior of the interdiffusion in both multilayers is quite different. Both positive and negative interdiffusion take place in Ti-Si multilayers during annealing, while only positive interdiffusion occurs in Mo-Si multilayers. Accompanying interdiffusion, the process of solid state amorphization reaction plays a dominant role in Ti-Si multilayers, on the contrary, the crystallization process was the main process in Mo-Si multilayers. In addition, a transient amorphization process at early stage of annealing is observed in Mo-Si multilayers for the first time.
引用
收藏
页码：411 / 421
页数：11
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