共 50 条
- [32] Measurement of carrier concentration at the GaAs-Si interface in GaAs on Si by Raman scattering Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers, 1996, 35 (12 A): : 6013 - 6016
- [33] Measurement of carrier concentration at the GaAs-Si interface in GaAs on Si by Raman scattering JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1996, 35 (12A): : 6013 - 6016
- [36] INVERSION LAYER FORMATION AND SURFACE-STATES AT THE GAAS-ELECTROLYTE INTERFACE PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1979, 54 (02): : K155 - K157
- [39] INITIAL-STAGE OF SIO2 SI INTERFACE FORMATION ON SI(111) SURFACE JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1992, 31 (5B): : L638 - L641