INITIAL-STAGE OF SIO2/SI INTERFACE FORMATION ON SI(111) SURFACE

被引：0
|
作者：
NOHIRA, H
TAMURA, Y
OGAWA, H
HATTORI, T
机构：
来源：
IEICE TRANSACTIONS ON ELECTRONICS | 1992年 / E75C卷 / 07期
关键词：
OXIDATION; SILICON; H-TERMINATION; XPS;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The initial stages of SiO2/Si interface formation on a Si(111) surface were investigated at 300-degrees-C in dry oxygen with a pressure of 133 Pa. It was found that the SiO2/Si interfacial transition layer is formed in three steps characterized by three different oxidation rates.
引用
收藏
页码：757 / 763
页数：7
相关论文
共 50 条
  • [1] INITIAL-STAGE OF SIO2 SI INTERFACE FORMATION ON SI(111) SURFACE
    HATTORI, T
    NOHIRA, H
    TAMURA, Y
    OGAWA, H
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1992, 31 (5B): : L638 - L641
  • [2] INITIAL-STAGE OF COSI2/SI(111) INTERFACE FORMATION
    HASHIMOTO, S
    LUO, L
    THYGESEN, K
    GIBSON, WM
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (8B) : C544 - C544
  • [3] INITIAL-STAGES OF SIO2 FORMATION ON SI(111)
    BAUER, RS
    MCMENAMIN, JC
    CHADI, DJ
    PETERSEN, H
    BIANCONI, A
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1978, 23 (03): : 462 - 462
  • [4] Oxidation of Si(001) surface and formation of Si/SiO2 interface
    Uchiyama, T
    Uda, T
    Terakura, K
    PHYSICS AND CHEMISTRY OF SIO2 AND THE SI-SIO2 INTERFACE - 4, 2000, 2000 (02): : 97 - 98
  • [5] Surface treatment effects on Si(111) and (100) surface structures and Si/SiO2 interface state
    Yamamoto, H
    Okumura, K
    Kanashima, T
    Okuyama, M
    THIRD INTERNATIONAL CONFERENCE ON THIN FILM PHYSICS AND APPLICATIONS, 1998, 3175 : 161 - 165
  • [6] PASSIVATION OF (111) SI/SIO2 INTERFACE BY FLUORINE
    WANG, XW
    MA, TP
    APPLIED PHYSICS LETTERS, 1992, 60 (21) : 2634 - 2636
  • [7] Dynamics of Gold Droplet Formation on SiO2/Si(111) Surface
    Hijazi, Hadi
    Leroy, Frederic
    Monier, Guillaume
    Gregoire, Gabin
    Gil, Evelyne
    Trassoudaine, Agnes
    Dubrovskii, Vladimir G.
    Castelluci, Dominique
    Goktas, Nebile Isik
    LaPierre, Ray R.
    Andre, Yamina
    Robert-Goumet, Christine
    JOURNAL OF PHYSICAL CHEMISTRY C, 2020, 124 (22): : 11946 - 11951
  • [8] SiO2 valence band near the SiO2/Si(111) interface
    Musashi Inst of Technology, Tokyo, Japan
    Appl Surf Sci, (119-122):
  • [9] SiO2 valence band near the SiO2/Si(111) interface
    Nohira, H
    Hattori, T
    APPLIED SURFACE SCIENCE, 1997, 117 : 119 - 122
  • [10] EMERGENCE OF BASIC SITES ON A SI(111) SURFACE IN THE INITIAL-STAGE OF OXIDATION IN WATER
    SASAKI, YC
    MITSUYA, M
    LANGMUIR, 1995, 11 (09) : 3446 - 3449
12345