INITIAL-STAGE OF SIO2/SI INTERFACE FORMATION ON SI(111) SURFACE

被引：0
|
作者：
NOHIRA, H
TAMURA, Y
OGAWA, H
HATTORI, T
机构：
来源：
IEICE TRANSACTIONS ON ELECTRONICS | 1992年 / E75C卷 / 07期
关键词：
OXIDATION; SILICON; H-TERMINATION; XPS;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The initial stages of SiO2/Si interface formation on a Si(111) surface were investigated at 300-degrees-C in dry oxygen with a pressure of 133 Pa. It was found that the SiO2/Si interfacial transition layer is formed in three steps characterized by three different oxidation rates.
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页码：757 / 763
页数：7
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