共 50 条
- [32] RADIATION DEFECTS IN STRONGLY IRRADIATED P-TYPE GaAs CRYSTALS. Soviet Physics, Semiconductors (English translation of Fizika i Tekhnika Poluprovodnikov), 1974, 8 (05): : 619 - 620
- [33] RADIATION DEFECTS IN P-TYPE SILICON IRRADIATED WITH 30 MEV PROTONS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1977, 11 (11): : 1278 - 1280
- [34] STUDIES OF THE DEEP LEVELS IN P-TYPE INSB UNDER PRESSURE PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1984, 86 (01): : 301 - 308
- [36] ANNEALING OF RADIATION-INDUCED DEFECTS IN P-TYPE GERMANIUM SAMPLES SOVIET PHYSICS SEMICONDUCTORS-USSR, 1973, 6 (07): : 1222 - 1223
- [38] ATTENUATION OF ULTRASONIC LONGITUDINAL WAVES IN P-TYPE GASB DUE TO PHONON-HOLE INTERACTION PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1972, 13 (02): : 593 - &
- [39] PHOTOLUMINESCENCE OF P-TYPE GASB UNDER UNIAXIAL COMPRESSION SOVIET PHYSICS SEMICONDUCTORS-USSR, 1972, 5 (10): : 1661 - &
- [40] EXPRESSION OF ACOUSTOELECTRIC NET GAIN IN P-TYPE GASB PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1976, 33 (02): : 715 - 722