INFLUENCE OF DEFECTS AND TEMPERATURE ON THE LIFETIME DISTRIBUTION OF CARRIERS IN A-SI-H

被引：0
|
作者：
SCHUBERT, M [1 ]
STACHOWITZ, R [1 ]
SALEH, R [1 ]
FUHS, W [1 ]
机构：
[1] UNIV MARBURG, WISSENSCH ZENTRUM MAT WISSENSCH, D-35032 MARBURG, GERMANY
来源：
JOURNAL OF NON-CRYSTALLINE SOLIDS | 1993年 / 164卷
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D O I：
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中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Non-radiative recombination in a-Si:H is studied by frequency-resolved photoluminescence spectroscopy (FRS) at excitation densities which are known to lead to geminate recombination. The measurements were performed between 4K-100K and the defect density was varied in the range 10(16)cm(-3)-5.10(17)cm(-3). The dependence of the lifetime distribution on the defect density at low temperature is quantitatively explained in a model where radiative recombination competes with non-radiative tunneling into defect states.
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页码：555 / 558
页数：4
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