INFLUENCE OF DEFECTS AND TEMPERATURE ON THE LIFETIME DISTRIBUTION OF CARRIERS IN A-SI-H

被引：0

作者：

SCHUBERT, M ^{[1
]}

STACHOWITZ, R ^{[1
]}

SALEH, R ^{[1
]}

FUHS, W ^{[1
]}

机构：

[1] UNIV MARBURG, WISSENSCH ZENTRUM MAT WISSENSCH, D-35032 MARBURG, GERMANY

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1993年 / 164卷

关键词：

D O I：

暂无

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Non-radiative recombination in a-Si:H is studied by frequency-resolved photoluminescence spectroscopy (FRS) at excitation densities which are known to lead to geminate recombination. The measurements were performed between 4K-100K and the defect density was varied in the range 10(16)cm(-3)-5.10(17)cm(-3). The dependence of the lifetime distribution on the defect density at low temperature is quantitatively explained in a model where radiative recombination competes with non-radiative tunneling into defect states.

引用

页码：555 / 558

页数：4

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