CONTRIBUTION OF DIFFRACTION TO THE CONTRAST OF DISLOCATIONS IN X-RAY TOPOGRAPHY

被引：6
|
作者：
EPELBOIN, Y [1 ]
机构：
[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
来源：
ACTA CRYSTALLOGRAPHICA SECTION A | 1979年 / 35卷 / JAN期
关键词：
D O I：
10.1107/S0567739479000073
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
引用
收藏
页码：38 / 44
页数：7
相关论文
共 50 条
  • [31] EFFECT OF DISLOCATIONS ON X-RAY DIFFRACTION PROPERTIES OF COPPER
    BACHMANN, KJ
    BALDWIN, TO
    YOUNG, FW
    [J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (12) : 4783 - +
  • [32] Counting Dislocations in Microcrystals by Coherent X-Ray Diffraction
    Jacques, V. L. R.
    Carbone, D.
    Ghisleni, R.
    Thilly, L.
    [J]. PHYSICAL REVIEW LETTERS, 2013, 111 (06)
  • [33] Pseudo moire dislocations appearing in x-ray diffraction topography (vol 80, pg 2138, 1996)
    Yoshimura, J
    [J]. JOURNAL OF APPLIED PHYSICS, 1997, 82 (09) : 4697 - 4697
  • [34] STUDY OF DISLOCATIONS IN MUSCOVITE MICA BY X-RAY TRANSMISSION TOPOGRAPHY
    CASLAVSKY, JL
    VEDAM, K
    [J]. PHILOSOPHICAL MAGAZINE, 1970, 22 (176) : 255 - +
  • [35] Identification of misfit dislocations using X-ray scattering and topography
    Tanner, BK
    Mock, P
    Mizuno, K
    [J]. DEFECT RECOGNITION AND IMAGE PROCESSING IN SEMICONDUCTORS 1997, 1998, 160 : 177 - 186
  • [36] Kinetic properties of dislocations in semiconductors revealed by X-ray topography
    Sumino, K
    [J]. NUOVO CIMENTO DELLA SOCIETA ITALIANA DI FISICA D-CONDENSED MATTER ATOMIC MOLECULAR AND CHEMICAL PHYSICS FLUIDS PLASMAS BIOPHYSICS, 1997, 19 (2-4): : 137 - 146
  • [37] X-ray topography contrast of edge dislocations perpendicular to the 6H-SiC crystal surface
    A. O. Okunev
    I. L. Shul’pina
    [J]. Technical Physics Letters, 2005, 31 : 491 - 493
  • [38] X-ray topography contrast of edge dislocations perpendicular to the 6H-SiC crystal surface
    Okunev, AO
    Shul'pina, IL
    [J]. TECHNICAL PHYSICS LETTERS, 2005, 31 (06) : 491 - 493
  • [39] X-RAY TOPOGRAPHY OF DISLOCATIONS IN CAF2 CRYSTALS
    TOMITA, T
    ISHIWATA, M
    [J]. ACTA CRYSTALLOGRAPHICA SECTION A, 1972, 28 : S170 - S170
  • [40] High resolution X-ray diffraction and X-ray topography study of GaN on sapphire
    Chaudhuri, J
    Ng, MH
    Koleske, DD
    Wickenden, AE
    Henry, RL
    [J]. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1999, 64 (02): : 99 - 106
12345