FOREIGN IMAGING IN AUGER-SPECTROSCOPY - THE SI 2P SPECTRUM OF SILICON TETRAFLUORIDE

被引:60
|
作者
TARANTELLI, F [1 ]
CEDERBAUM, LS [1 ]
机构
[1] UNIV HEIDELBERG,W-6900 HEIDELBERG,GERMANY
关键词
D O I
10.1103/PhysRevLett.71.649
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We performed Green's function calculations on the double ionization of SiF4 in order to interpret its Si 2p Auger spectrum, which has caused controversy for a decade. We provide an accurate interpretation and a model of far wider generality in the Auger study of ionic species. Contrary to the usual self-imaging picture of Auger spectroscopy, the silicon spectrum exhibits eight distinct bands reflecting a complete and precise image of the fluorine ligands, due to strong hole-localization effects. The generality of this foreign-imaging character of Auger spectroscopy is discussed.
引用
收藏
页码:649 / 652
页数:4
相关论文
共 50 条
  • [21] Auger decay of the 2p vacancy in chlorine
    Hrast, M.
    Mihelic, A.
    Bucar, K.
    Zitnik, M.
    PHYSICAL REVIEW A, 2019, 100 (02)
  • [22] Si 2p XPS spectrum of the hydrogen-terminated (100) surface of device-quality silicon
    Cerofolini, GF
    Galati, C
    Renna, L
    SURFACE AND INTERFACE ANALYSIS, 2003, 35 (12) : 968 - 973
  • [23] Elastic scattering of Si 2p photoelectrons in ultrathin silicon oxides
    Nohira, H
    Hirose, K
    Takahashi, K
    Hattori, T
    APPLIED SURFACE SCIENCE, 2000, 162 : 304 - 308
  • [24] Remote inductive effects in the Si 2p spectra of halogenated silicon
    Simpson, WC
    Yarmoff, JA
    Hung, WH
    McFeely, FR
    SURFACE SCIENCE, 1996, 355 (1-3) : L283 - L288
  • [25] 2P CORE SPECTRUM OF ATOMIC POTASSIUM - COMPARISON OF BINDING-ENERGIES AND INTENSITIES WITH THE AUGER SPECTRUM AND WITH THEORY
    BANNA, MS
    SLAUGHTER, AR
    PHYSICAL REVIEW A, 1984, 30 (06): : 3021 - 3025
  • [26] STUDY OF THE STEPWISE OXIDATION AND NITRIDATION OF SI(111) BY ELECTRON-STIMULATED DESORPTION AND AUGER-SPECTROSCOPY
    KNOTEK, ML
    HOUSTON, JE
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 20 (03): : 544 - 547
  • [27] INVESTIGATION OF THE INTERFACE CHEMISTRY OF TITANIUM TUNGSTEN SCHOTTKY-BARRIER CONTACTS TO SILICON BY AUGER-SPECTROSCOPY
    LEWIS, JE
    ABOELFOTOH, MO
    HO, PS
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1985, 3 (03): : 971 - 972
  • [28] QUANTITATIVE-ANALYSIS OF DOPANTS IN SILICON BY ELECTRON AUGER-SPECTROSCOPY AND ELECTRON-PROBE MICROANALYSIS
    BATALOV, BV
    KUNILOV, VA
    ALEKSEEV, AP
    KOLOMEITSEV, MI
    SOVIET MICROELECTRONICS, 1985, 14 (01): : 41 - 44
  • [29] Resonant Auger spectroscopy of argon clusters at the 2p threshold -: art. no. 033204
    Kivimäki, A
    Sorensen, SL
    Tchaplyguine, M
    Gisselbrecht, M
    Marinho, RRT
    Feifel, R
    Öhrwall, G
    Svensson, S
    Björneholm, O
    PHYSICAL REVIEW A, 2005, 71 (03):
  • [30] X-RAY PHOTOELECTRON-SPECTROSCOPY AND AUGER-SPECTROSCOPY STUDIES OF THIN SILICON-NITRIDE FILMS THERMALLY GROWN ON SILICON
    SOBOLEWSKI, MA
    HELMS, CR
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1988, 6 (03): : 1358 - 1362