SODIUM-INDUCED 2 X 1-] 1 X-1 SURFACE STRUCTURAL TRANSITION ON SI(111)

被引：17

作者：

REIHL, B

SORENSEN, SL

DUDDE, R

MAGNUSSON, KO

机构：

[1] IBM Research Division, Zurich Research Laboratory

来源：

PHYSICAL REVIEW B | 1992年 / 46卷 / 03期

关键词：

D O I：

10.1103/PhysRevB.46.1838

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Sodium deposited on the cleaved Si(111)2 X 1 surface induces a 2 X 1 --> 1 X 1 surface structural transition at about 1/2 monolayer coverage. Angle-resolved direct and inverse photoemission reveal the surface to be semiconducting. The measured energy dispersion of the empty Na-induced surface state is only consistent with calculations that favor the threefold-hollow site for the Na adsorption position. Its bonding character (ionic versus covalent) will be discussed.

引用

页码：1838 / 1841

页数：4

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