METAL-N-TYPE SEMICONDUCTOR OHMIC CONTACT WITH A SHALLOW N+ SURFACE-LAYER

被引:56
|
作者
POPOVIC, RS
机构
关键词
D O I
10.1016/0038-1101(78)90349-0
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:1133 / 1138
页数:6
相关论文
共 50 条
  • [31] Improved ohmic contact to the n-type 4H-SiC semiconductor using cobalt silicides
    Cho, NI
    Jung, KH
    Choi, Y
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2004, 19 (03) : 306 - 310
  • [32] Effects of N2O plasma surface treatment on the electrical and ohmic contact properties of n-type GaN
    Kim, H
    Park, NM
    Jang, JS
    Park, SJ
    Hwang, H
    ELECTROCHEMICAL AND SOLID STATE LETTERS, 2001, 4 (11) : G104 - G106
  • [33] THERMALLY STABLE OHMIC CONTACTS TO N-TYPE GAAS .2. MOGEINW CONTACT METAL
    MURAKAMI, M
    PRICE, WH
    SHIH, YC
    BRASLAU, N
    CHILDS, KD
    PARKS, CC
    JOURNAL OF APPLIED PHYSICS, 1987, 62 (08) : 3295 - 3303
  • [34] THERMALLY STABLE OHMIC CONTACTS TO N-TYPE GAAS .6. INW CONTACT METAL
    KIM, HJ
    MURAKAMI, M
    PRICE, WH
    NORCOTT, M
    JOURNAL OF APPLIED PHYSICS, 1990, 67 (09) : 4183 - 4189
  • [35] Suppression of surface segregation of the phosphorous δ-doping layer by insertion of an ultra-thin silicon layer for ultra-shallow Ohmic contacts on n-type germanium
    Yamada, Michihiro
    Sawano, Kentarou
    Uematsu, Masashi
    Itoh, Kohei M.
    APPLIED PHYSICS LETTERS, 2015, 107 (13)
  • [36] Near-ohmic contact of n-GaAs with GaS/GaAs quasi-metal-insulator-semiconductor structure
    Okamoto, N
    Takahashi, T
    Tanaka, H
    Takikawa, M
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1998, 37 (6A): : 3248 - 3251
  • [37] Ohmic contact formation for n-type diamond by selective doping
    Teraji, Tokuyuki
    Katagiri, Masayuki
    Koizumi, Satoshi
    Ito, Toshimichi
    Kanda, Hisao
    Japanese Journal of Applied Physics, Part 2: Letters, 2003, 42 (8 A):
  • [38] Ohmic Contact to n-Type Ge With Compositional W Nitride
    Wu, Huan Da
    Wang, Chen
    Wei, Jiang Bin
    Huang, Wei
    Li, Cheng
    Lai, Hong Kai
    Li, Jun
    Liu, Chunli
    Chen, Song Yan
    IEEE ELECTRON DEVICE LETTERS, 2014, 35 (12) : 1188 - 1190
  • [39] Electrical characteristics of Ni Ohmic contact on n-type GeSn
    Li, H.
    Cheng, H. H.
    Lee, L. C.
    Lee, C. P.
    Su, L. H.
    Suen, Y. W.
    APPLIED PHYSICS LETTERS, 2014, 104 (24)
  • [40] INTERFACIAL MICROSTRUCTURE OF NIINW OHMIC CONTACT TO N-TYPE GAAS
    SHIH, YC
    MURAKAMI, M
    WILKIE, EL
    PRICE, WH
    JOURNAL OF ELECTRONIC MATERIALS, 1988, 17 (04) : S25 - S25