MODELING PHYSICAL PROCESSES IN SILICON INTEGRATED-CIRCUIT FABRICATION

被引：0

作者：

GODFREY, DJ

机构：

来源：

PHYSICS IN TECHNOLOGY | 1986年 / 17卷 / 06期

关键词：

D O I：

10.1088/0305-4624/17/6/I03

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：260 / &

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[1] THE MODELING OF PHYSICAL PROCESSES IN SILICON INTEGRATED-CIRCUIT FABRICATION
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[J]. GEC JOURNAL OF RESEARCH, 1987, 5 (03): : 156 - 160
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