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- [11] LPE growth of AlGaAs-GaAs quantum well heterostructures Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1989, 28 (10): : 1725 - 1727
- [12] MOVPE growth of selectively doped AlGaAs/GaAs heterostructures with tertiarybutylarsine Tanaka, Hitoshi, 1600, (28):
- [13] MOVPE GROWTH OF SELECTIVELY DOPED ALGAAS GAAS HETEROSTRUCTURES WITH TERTIARYBUTYLARSINE JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1989, 28 (06): : L901 - L903
- [14] LPE GROWTH OF ALGAAS-GAAS QUANTUM WELL HETEROSTRUCTURES JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1989, 28 (10): : L1725 - L1727
- [19] REFLECTANCE-DIFFERENCE SPECTROSCOPY OF GAAS-SURFACES DURING OMCVD AND MBE CRYSTAL-GROWTH INSTITUTE OF PHYSICS CONFERENCE SERIES <D>, 1989, (96): : 283 - 288
- [20] REFLECTANCE-DIFFERENCE SPECTROSCOPY OF GAAS-SURFACES DURING OMCVD AND MBE CRYSTAL-GROWTH GALLIUM ARSENIDE AND RELATED COMPOUNDS 1988, 1989, : 283 - 288