TRANSIENT ANNEALING OF DEFECTS IN IRRADIATED SILICON DEVICES

被引：28
|
作者：
GREGORY, BL
SANDER, HH
机构：
来源：
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS | 1970年 / 58卷 / 09期
关键词：
D O I：
10.1109/PROC.1970.7925
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1328 / +
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