共 50 条
- [41] LOW-TEMPERATURE PHOTOLUMINESCENCE AND PHOTOCONDUCTIVITY OF UNDOPED AMORPHOUS-SEMICONDUCTORS [J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1990, 24 (01): : 82 - 86
- [42] CONCERNING THE DEPENDENCE OF PHOTOCONDUCTIVITY ON PHOTOGENERATION RATE IN INTRINSIC AMORPHOUS-SEMICONDUCTORS [J]. SOLAR ENERGY MATERIALS, 1982, 6 (02): : 175 - 182
- [43] AMBIPOLAR TRANSPORT IN AMORPHOUS-SEMICONDUCTORS IN THE LIFETIME AND RELAXATION-TIME REGIMES INVESTIGATED BY THE STEADY-STATE PHOTOCARRIER GRATING TECHNIQUE [J]. PHYSICAL REVIEW B, 1988, 38 (12): : 8296 - 8304
- [44] TRANSIENT PHOTOCONDUCTIVITY FROM THE STEADY-STATE IN UNDOPED AMORPHOUS-SILICON [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1990, 29 (10): : 1879 - 1883
- [45] Low-temperature steady-state photoconductivity in amorphous selenium films [J]. JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 2005, 7 (04): : 1781 - 1784
- [49] THEORY OF PHOTOCONDUCTIVITY IN AMORPHOUS-SEMICONDUCTORS CONTAINING RELATIVELY NARROW TRAP BANDS [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1974, 7 (17): : 3051 - 3066