A NAN-LIKE MODEL FOR THE GROWTH AND STEADY-STATE MAGNITUDE OF PHOTOLUMINESCENCE AND CARRIER POPULATION IN AMORPHOUS-SEMICONDUCTORS AT LOW-TEMPERATURES

被引：0

作者：

SEARLE, TM

机构：

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1993年 / 164卷

关键词：

D O I：

暂无

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

A simple model for the growth of photoluminescence PL and carrier population N-p in a system where the photogenerated carriers are localised and recombine by tunnelling is described. It does successfully qualitatively describes the difference in risetimes between PL and N-p, and produces an intensity dependent steady state value of N-p, but does not lend support to the suggestion that N-p proportional to t(1/2).

引用

页码：611 / 614

页数：4