MICROWAVE CONDUCTIVITY MEASUREMENTS ON INSULATING SI-P NEAR THE METAL-INSULATOR-TRANSITION

被引：2

作者：

MIGLIUOLO, M ^{[1
]}

CASTNER, TG ^{[1
]}

机构：

[1] UNIV ROCHESTER,DEPT PHYS & ASTRON,ROCHESTER,NY 14627

来源：

SOLID STATE COMMUNICATIONS | 1988年 / 67卷 / 09期

关键词：

D O I：

10.1016/0038-1098(88)90119-6

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：863 / 868

页数：6

共 50 条

[21] CRITICAL-BEHAVIOR OF SI-P AT THE METAL-INSULATOR-TRANSITION - REPLY
STUPP, H
HORNUNG, M
LAKNER, M
MADEL, O
PHYSICAL REVIEW LETTERS, 1994, 72 (13) : 2122 - 2122
[22] THE SI-29 KNIGHT-SHIFT IN SI-P AND SI-P,B IN THE VICINITY OF THE METAL-INSULATOR-TRANSITION
HOCH, MJR
THOMANSCHEFSKY, U
HOLCOMB, DF
PHYSICA B, 1990, 165 : 305 - 306
[23] MAGNETIC-FIELD DEPENDENCE OF THE SPECIFIC-HEAT OF SI-P NEAR THE METAL-INSULATOR-TRANSITION
VONLOHNEYSEN, H
LAKNER, M
PHYSICA B, 1990, 165 : 285 - 286
[24] LOCALIZED VERSUS ITINERANT ELECTRONS AT THE METAL-INSULATOR-TRANSITION IN SI-P - COMMENT
PHILLIPS, JC
PHYSICAL REVIEW LETTERS, 1990, 64 (01) : 107 - 107
[25] SUSCEPTIBILITY OF SI-P ACROSS THE METAL-INSULATOR-TRANSITION .1. DIAMAGNETISM
ROY, A
TURNER, M
SARACHIK, MP
PHYSICAL REVIEW B, 1988, 37 (10): : 5522 - 5530
[26] LOCALIZED VERSUS ITINERANT ELECTRONS AT THE METAL-INSULATOR-TRANSITION IN SI-P - REPLY
LAKNER, M
VONLOHNEYSEN, H
PHYSICAL REVIEW LETTERS, 1990, 64 (01) : 108 - 108
[27] STATIC MAGNETIC-SUSCEPTIBILITY OF SI-P ACROSS THE METAL-INSULATOR-TRANSITION
OOTUKA, Y
MATSUNAGA, N
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1990, 59 (05) : 1801 - 1809
[28] THE METAL-INSULATOR-TRANSITION IN SI - P
VONLOHNEYSEN, H
FESTKORPERPROBLEME-ADVANCES IN SOLID STATE PHYICS, 1990, 30 : 95 - 111
[29] METALLIC CONDUCTIVITY NEAR THE METAL-INSULATOR-TRANSITION
THOMAS, GA
ROSENBAUM, TF
BHATT, RN
PHYSICAL REVIEW LETTERS, 1981, 46 (21) : 1435 - 1435
[30] SPECIFIC-HEAT OF NEUTRON-COMPENSATED HEAVILY-DOPED SI-P NEAR THE METAL-INSULATOR-TRANSITION
STRAUB, M
KIRCH, K
VONLOHNEYSEN, H
ZEITSCHRIFT FUR PHYSIK B-CONDENSED MATTER, 1994, 95 (01): : 31 - 38

← 1 2 3 4 5 →