MICROWAVE CONDUCTIVITY MEASUREMENTS ON INSULATING SI-P NEAR THE METAL-INSULATOR-TRANSITION

被引：2

作者：

MIGLIUOLO, M ^{[1
]}

CASTNER, TG ^{[1
]}

机构：

[1] UNIV ROCHESTER,DEPT PHYS & ASTRON,ROCHESTER,NY 14627

来源：

SOLID STATE COMMUNICATIONS | 1988年 / 67卷 / 09期

关键词：

D O I：

10.1016/0038-1098(88)90119-6

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：863 / 868

页数：6

共 50 条

[11] MAGNETIZATION OF SI-P ACROSS THE METAL-INSULATOR-TRANSITION
MATSUNAGA, N
OOTUKA, Y
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1993, 62 (05) : 1745 - 1749
[12] SUSCEPTIBILITY OF SI-P ACROSS THE METAL-INSULATOR-TRANSITION
ROY, A
SARACHIK, MP
JOURNAL OF APPLIED PHYSICS, 1987, 61 (08) : 3558 - 3558
[13] ESR STUDIES OF COMPENSATED SI-P,B NEAR THE METAL-INSULATOR-TRANSITION
HIRSCH, MJ
HOLCOMB, DF
BHATT, RN
PAALANEN, MA
PHYSICAL REVIEW LETTERS, 1992, 68 (09) : 1418 - 1421
[14] SEPARABLE SPECTRAL MODEL OF THE METAL-INSULATOR-TRANSITION IN SI-P
PHILLIPS, JC
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1983, 47 (04): : 407 - 418
[15] FAR-INFRARED REFLECTANCE SPECTRA OF SI-P NEAR THE METAL-INSULATOR-TRANSITION
GAYMANN, A
GESERICH, HP
VONLOHNEYSEN, H
PHYSICAL REVIEW LETTERS, 1993, 71 (22) : 3681 - 3684
[16] ELECTRONIC STATES NEAR THE METAL-INSULATOR-TRANSITION IN NEUTRON-IRRADIATED SI-P
NISHIO, Y
KAJITA, K
SASAKI, W
SOLID STATE COMMUNICATIONS, 1991, 79 (11) : 1017 - 1020
[17] SI-29 SPIN RELAXATION IN SI-P AND SI-(P,B) NEAR THE METAL-INSULATOR-TRANSITION
HOCH, MJR
HOLCOMB, DF
PHYSICAL REVIEW B, 1988, 38 (15): : 10550 - 10555
[18] METAL-INSULATOR-TRANSITION IN A DOUBLE-DONOR SYSTEM, SI-P,AS
NEWMAN, PF
HOLCOMB, DF
PHYSICAL REVIEW LETTERS, 1983, 51 (23) : 2144 - 2147
[19] METAL-INSULATOR-TRANSITION IN A DOUBLE-DONOR SYSTEM, SI-P,AS
DASILVA, AF
PHYSICAL REVIEW LETTERS, 1987, 59 (11) : 1263 - 1263
[20] LOCALIZED VERSUS ITINERANT ELECTRONS AT THE METAL-INSULATOR-TRANSITION IN SI-P
LAKNER, M
VONLOHNEYSEN, H
PHYSICAL REVIEW LETTERS, 1989, 63 (06) : 648 - 651

← 1 2 3 4 5 →