MICROWAVE CONDUCTIVITY MEASUREMENTS ON INSULATING SI-P NEAR THE METAL-INSULATOR-TRANSITION

被引：2

作者：

MIGLIUOLO, M ^{[1
]}

CASTNER, TG ^{[1
]}

机构：

[1] UNIV ROCHESTER,DEPT PHYS & ASTRON,ROCHESTER,NY 14627

来源：

SOLID STATE COMMUNICATIONS | 1988年 / 67卷 / 09期

关键词：

D O I：

10.1016/0038-1098(88)90119-6

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：863 / 868

页数：6

共 50 条

[1] FREQUENCY-DEPENDENT CONDUCTIVITY OF INSULATING SI-P AND SI-AS NEAR THE METAL-INSULATOR-TRANSITION
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[2] CRITICAL-BEHAVIOR OF THE CONDUCTIVITY OF SI-P NEAR THE METAL-INSULATOR-TRANSITION
CASTNER, TG
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[3] TEMPERATURE-DEPENDENCE OF CONDUCTIVITY OF SI-P NEAR THE METAL-INSULATOR-TRANSITION
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[4] METAL-INSULATOR-TRANSITION IN SI-P
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[5] METAL-INSULATOR-TRANSITION IN SI-P
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[6] OVERHAUSER-SHIFT MEASUREMENTS ON SI-P NEAR THE METAL-INSULATOR-TRANSITION
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[7] CRITICAL-BEHAVIOR OF THE CONDUCTIVITY OF SI-P NEAR THE METAL-INSULATOR-TRANSITION - REPLY
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[9] LOCALIZED MAGNETIC-MOMENTS IN SI-P NEAR THE METAL-INSULATOR-TRANSITION
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[10] SPINS IN SI-P CLOSE TO THE METAL-INSULATOR-TRANSITION
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