CALCULATION OF IONIZATION-ENERGY OF INTERSTITIAL IMPURITIES IN SILICON

被引：0
|
作者：
NICULESCU, E
MARIAN, P
GLODEANU, A
机构：
来源：
REVUE ROUMAINE DE PHYSIQUE | 1986年 / 31卷 / 03期
关键词：
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
收藏
页码：249 / 256
页数：8
相关论文
共 50 条
  • [21] INFLUENCE OF A MAGNETIC-FIELD ON IONIZATION-ENERGY OF SHALLOW DONOR IMPURITIES IN GAAS AND INP
    GUSLIKOV, VM
    EMELYANE.OV
    NASLEDOV, DN
    NEDEOGLO, DD
    TIMCHENKO, IN
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1974, 7 (09): : 1191 - 1193
  • [22] ENERGY OF MIGRATION OF INTERSTITIAL-D IMPURITIES IN SILICON
    FISTUL, VI
    SHMUGUROV, VA
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1987, 21 (06): : 628 - 630
  • [23] ELECTRIC-FIELD AND IMPURITY CONCENTRATION EFFECTS ON THE IONIZATION-ENERGY OF IMPURITIES - APPLICATION TO ACCEPTORS IN ZNTE
    PAUTRAT, JL
    SOLID-STATE ELECTRONICS, 1980, 23 (06) : 661 - 670
  • [24] BOUND ON THE IONIZATION-ENERGY OF LARGE ATOMS
    SECO, LA
    SIGAL, IM
    SOLOVEJ, JP
    COMMUNICATIONS IN MATHEMATICAL PHYSICS, 1990, 131 (02) : 307 - 315
  • [25] THE IONIZATION-ENERGY OF NITRIC-OXIDE
    REISER, G
    HABENICHT, W
    MULLERDETHLEFS, K
    CHEMICAL PHYSICS LETTERS, 1988, 152 (2-3) : 119 - 123
  • [26] IONIZATION OF IMPURITIES IN SILICON
    KUZMICZ, W
    SOLID-STATE ELECTRONICS, 1986, 29 (12) : 1223 - 1227
  • [27] IONIZATION-ENERGY OF THE HELIUM ATOM IN A PLASMA
    LAM, CS
    VARSHNI, YP
    PHYSICAL REVIEW A, 1983, 27 (01): : 418 - 421
  • [28] IONIZATION-ENERGY THRESHOLD OF AQUEOUS TRYPTOPHAN
    AMOUYAL, E
    BERNAS, A
    GRAND, D
    JOURNAL OF PHOTOCHEMISTRY, 1978, 9 (2-3): : 236 - 237
  • [29] IONIZATION-ENERGY IN AN HPGE SEMICONDUCTOR DETECTOR
    TONG, SY
    LENNARD, WN
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1992, 67 (1-4): : 87 - 92
  • [30] IONIZATION-ENERGY OF THE COMPLEX ACCEPTOR IN ZNTE
    TAGUCHI, T
    PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1979, 96 (01): : K33 - K36
12345