CHEMICAL VAPOR-DEPOSITION OF GOLD

被引:39
|
作者
LARSON, CE
BAUM, TH
JACKSON, RL
机构
[1] IBM, Almaden Research Cent, San, Jose, CA, USA, IBM, Almaden Research Cent, San Jose, CA, USA
关键词
FILMS; -; Metallic;
D O I
10.1149/1.2100427
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
The authors report preliminary results showing that high-purity gold films can also be deposited by large-area chemical vapor deposition (CVD) from this complex as well as from two fluorinated derivatives, dimethyl-(1,1,1-trifluoro-2,4-pentandionato) gold (III) and dimethyl-(1,1,1,5,5,5-hexafluoro-2,4-pentandionato) gold (III), Me//2Au(tfac) and Me//2Au(hfac), respectively. We discuss the conditions of deposition and the quality of the gold films obtained as well as the properties of the organogold precursors. Experimental results show that Me//2Au(acac), Me//2Au(tfac), and Me//2Au(hfac) are shown to be excellent precursors for CVD of gold.
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页码:266 / 266
页数:1
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