STUDIES ON ION-IMPLANTATION AND ELECTRICAL-PROPERTIES OF POLYACETYLENE FILMS

被引：0

作者：

LIN, SH ^{[1
]}

BAO, JR ^{[1
]}

RONG, TW ^{[1
]}

SHENG, KL ^{[1
]}

ZOU, ZY ^{[1
]}

ZHU, XF ^{[1
]}

WANG, WM ^{[1
]}

WAN, HH ^{[1
]}

SHEN, ZQ ^{[1
]}

YANG, MJ ^{[1
]}

机构：

[1] ZHEJIANG UNIV,DEPT CHEM,HANGZHOU 310027,PEOPLES R CHINA

来源：

SCIENCE IN CHINA SERIES B-CHEMISTRY | 1992年 / 35卷 / 01期

关键词：

POLYACETYLENE; ION IMPLANTATION;

D O I：

暂无

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The effects of ion implantation on polyacetylene films PA have been studied with Ar+, Fe+, Cl+, I+, Na+ and K+ ions in the energy range of 15-30 keV. The changes of PA films in the electrical conductivity, due to chemical doping and ion implantation in relation to their structure and depth profiles of impurities, were measured through infrared (ATR/FTIR), Rutherford backscattering spectrometry (RBS) and the four probe technique. In all cases, ion implantation of active ions exhibits the same effects as chemical doping. The formation of p-n junction is observed at the interface of implanted region and chemical doped PA substrate. The mechanism of interaction process between ion beam and polymer is also discussed.

引用

页码：10 / 18

页数：9

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