MILLIMETER-WAVE PHOTOCONDUCTIVITY AND DONOR STATE IN N-TYPE INSB

被引：3

作者：

YAMAMOTO, J

YOSHINAGA, H

FUJITA, J

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1970年 / 9卷 / 01期

关键词：

D O I：

10.1143/JJAP.9.101

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：101 / +

页数：1

共 50 条

[31] EXPERIMENTAL STUDY OF MILLIMETER-WAVE CHARACTERISTICS OF HOT-ELECTRONS IN N-TYPE GAAS BY ELECTRODELESS METHOD
KANEDA, S
ABE, M
HORIMA, H
ELECTRONICS & COMMUNICATIONS IN JAPAN, 1971, 54 (12): : 113 - 118
[32] SUBMILLIMETER WAVE ABSORPTION OF N-TYPE INSB AT LOW-TEMPERATURES
BROWN, ER
JOURNAL OF APPLIED PHYSICS, 1985, 57 (07) : 2361 - 2365
[33] QUANTUM THERMOMAGNETIC EFFECTS IN N-TYPE INSB AND N-TYPE INAS
GADZHIALIEV, MM
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1969, 2 (07): : 833 - +
[34] DYNAMIC MECHANISM OF NONLINEARITY AND FREQUENCY CONVERSION OF MILLIMETER ELECTROMAGNETIC RADIATION IN N-TYPE INSB
BELYANTSEV, AM
TRIFONOV, BA
VALOV, VA
GENKIN, VN
LEONOV, AM
SOVIET PHYSICS JETP-USSR, 1972, 34 (03): : 471 - +
[35] INVESTIGATION OF TEMPERATURE DEPENDENCE OF DETECTION PROPERTIES OF N-TYPE INSB IN MILLIMETER AND SUBMILLIMETER BANDS
VYSTAVKIN, AN
GUBANKOV, VN
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1969, 2 (08): : 968 - +
[36] OSCILLATIONS OF THE TRANSVERSE MAGNETORESISTANCE OF N-TYPE INSB AND N-TYPE INAS
KONDRATEV, MV
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1979, 13 (02): : 224 - 225
[37] SOME FEATURES OF PHOTOMAGNETIC EFFECT AND PHOTOCONDUCTIVITY OF N-TYPE INSB ASSOCIATED WITH ELECTRON HEATING BY RADIATION
GUSEINOV, EK
NASLEDOV, DN
POPOV, YG
SCHLEIFS.M
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1971, 4 (09): : 1451 - +
[38] FAR-INFRARED DONOR ABSORPTION AND PHOTOCONDUCTIVITY IN EPITAXIAL N-TYPE GAAS
SUMMERS, CJ
DINGLE, R
HILL, DE
PHYSICAL REVIEW B, 1970, 1 (04): : 1603 - &
[39] GUNN DOMAINS IN N-TYPE INSB
DOBROVOLSKIS, Z
KROTKUS, A
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1977, 11 (07): : 771 - 773
[40] LONGITUDINAL MAGNETORESISTANCE OF N-TYPE INSB
BARANSKII, PI
GORODNIC.OP
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1968, 2 (06): : 708 - +

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