CRYSTALLINE-AMORPHOUS CONTRAST FORMATION IN THERMALLY CRYSTALLIZED SIC

被引：42
|
作者：
RUTTENSPERGER, B
KROTZ, G
MULLER, G
DERST, G
KALBITZER, S
机构：
[1] MESSERSCHMITT BOLKOW BLOHM GMBH,W-8000 MUNICH 80,GERMANY
[2] MAX PLANCK INST NUCL PHYS,W-6900 HEIDELBERG 1,GERMANY
来源：
JOURNAL OF NON-CRYSTALLINE SOLIDS | 1991年 / 137卷
关键词：
D O I：
10.1016/S0022-3093(05)80198-X
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The crystallization of stoichiometric amorphous (a-) SiC:H films, deposited onto crystalline (c-) Si and highly transparent sapphire substrates, has been investigated. After annealing transparent poly-crystalline material is obtained due to an emerging indirect band gap. Irradiation of the crystallized films with energetic Ar+ ions transforms the films into a heavily absorbing amorphous state. Possible applications of this effect with regard to sub-micron lithography and to high-density optical storage are pointed out.
引用
收藏
页码：635 / 638
页数：4
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