Electron mobility in module-alloyed structures of InxGa1-xAs/GaAs multiple quantum holes

被引:0
|
作者
Kulbachinskii, VA [1 ]
Kytin, VG [1 ]
deVisser, A [1 ]
Zvonkov, BN [1 ]
Babushkina, TS [1 ]
Malkina, IG [1 ]
机构
[1] VAN DER VAANS ZEEMAN LAB,AMSTERDAM,NETHERLANDS
来源
FIZIKA TVERDOGO TELA | 1995年 / 37卷 / 06期
关键词
D O I
暂无
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:1771 / 1771
页数:1
相关论文
共 50 条
  • [41] MOBILITY ENHANCEMENT IN DOUBLE DELTA-DOPED GAAS INXGA1-XAS GAAS PSEUDOMORPHIC STRUCTURES BY GRADING THE HETEROINTERFACES
    WU, CL
    HSU, WC
    SHIEH, HM
    LIU, WC
    APPLIED PHYSICS LETTERS, 1994, 64 (22) : 3027 - 3029
  • [42] ANISOTROPIC ELECTRON MOBILITIES OF AL0.3GA0.7AS/INXGA1-XAS/GAAS HIGH ELECTRON-MOBILITY TRANSISTOR STRUCTURES
    SCHWEIZER, T
    KOHLER, K
    GANSER, P
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1991, 6 (05) : 356 - 358
  • [43] Structural and transport properties of GaAs/δ-Mn/GaAs/InxGa1-xAs/GaAs quantum wells
    Aronzon, B. A.
    Kovalchuk, M. V.
    Pashaev, E. M.
    Chuev, M. A.
    Kvardakov, V. V.
    Subbotin, I. A.
    Rylkov, V. V.
    Pankov, M. A.
    Likhachev, I. A.
    Zvonkov, B. N.
    Danilov, Yu A.
    Vihrova, O. V.
    Lashkul, A. V.
    Laiho, R.
    JOURNAL OF PHYSICS-CONDENSED MATTER, 2008, 20 (14)
  • [44] ENHANCED CURRENT DRIVING CAPABILITY GAAS/GRADED INXGA1-XAS/GAAS HIGH-ELECTRON-MOBILITY TRANSISTOR
    HSU, RT
    SHIEH, HM
    HSU, WC
    WU, TS
    SOLID-STATE ELECTRONICS, 1993, 36 (08) : 1143 - 1146
  • [45] Carrier capture processes in strain-induced InxGa1-xAs/GaAs quantum dot structures
    Lingk, C
    Helfer, W
    von Plessen, G
    Feldmann, J
    Stock, K
    Feise, MW
    Citrin, DS
    Lipsanen, H
    Sopanen, M
    Virkkala, R
    Tulkki, J
    Ahopelto, J
    PHYSICAL REVIEW B, 2000, 62 (20) : 13588 - 13594
  • [46] DIFFUSION DYNAMICS OF HOLES IN INXGA1-XAS/GAAS STRAINED-LAYER SUPERLATTICES
    GOURLEY, PL
    WICZER, JJ
    ZIPPERIAN, TE
    DAWSON, LR
    APPLIED PHYSICS LETTERS, 1986, 49 (02) : 100 - 102
  • [47] Measurement of indium segregation in strained InxGa1-xAs/GaAs quantum wells by transmission electron microscopy
    McCaffrey, JP
    Wasilewski, ZR
    Robertson, MD
    Corbett, JM
    PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1997, 75 (03): : 803 - 821
  • [48] THE THERMALIZATION OF PHOTOEXCITED HOT CARRIERS IN INXGA1-XAS/GAAS STRAINED SINGLE QUANTUM WELL STRUCTURES
    XU, ZY
    GE, WK
    XU, JZ
    LI, YZ
    ZHENG, BZ
    ANDERSSON, TG
    CHEN, ZG
    SUPERLATTICES AND MICROSTRUCTURES, 1990, 7 (01) : 13 - 16
  • [49] FERMI-EDGE SINGULARITIES IN INXGA1-XAS AND GAAS QUANTUM WIRES
    FRITZE, M
    NURMIKKO, AV
    HAWRYLAK, P
    PHYSICAL REVIEW B, 1993, 48 (07): : 4960 - 4963
  • [50] INTERFACE DISLOCATION-STRUCTURES IN INXGA1-XAS/GAAS MISMATCHED EPITAXY
    BREEN, KR
    UPPAL, PN
    AHEARN, JS
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1989, 7 (04): : 758 - 763