Electron mobility in module-alloyed structures of InxGa1-xAs/GaAs multiple quantum holes

被引：0
|
作者：
Kulbachinskii, VA [1 ]
Kytin, VG [1 ]
deVisser, A [1 ]
Zvonkov, BN [1 ]
Babushkina, TS [1 ]
Malkina, IG [1 ]
机构：
[1] VAN DER VAANS ZEEMAN LAB,AMSTERDAM,NETHERLANDS
来源：
FIZIKA TVERDOGO TELA | 1995年 / 37卷 / 06期
关键词：
D O I：
暂无
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
引用
收藏
页码：1771 / 1771
页数：1
相关论文
共 50 条
  • [31] Optical diagnostics of quantum dots in GaAs/InxGa1-xAs heterostructures
    Aleshkin, VY
    Danil'tsev, VM
    Khrykin, OI
    Krasil'nik, ZF
    Revin, DG
    Shashkin, VI
    ADVANCED ELECTRONIC TECHNOLOGIES AND SYSTEMS BASED ON LOW-DIMENSIONAL QUANTUM DEVICES, 1997, 42 : 65 - 66
  • [32] Transmission electron microscopy study of InxGa1-xAs quantum dots on a GaAs(001) substrate
    Zou, J
    Liao, XZ
    Cockayne, DJH
    Leon, R
    PHYSICAL REVIEW B, 1999, 59 (19): : 12279 - 12282
  • [33] INTERFACIAL MICROSTRUCTURES IN INXGA1-XAS/GAAS STRAINED LAYER STRUCTURES
    YAO, JY
    ANDERSSON, TG
    DUNLOP, GL
    CHEMISTRY AND DEFECTS IN SEMICONDUCTOR HETEROSTRUCTURES, 1989, 148 : 303 - 308
  • [34] Optical properties of stepped InxGa1-xAs/GaAs quantum wells
    D'Andrea, A
    Tomassini, N
    Ferrari, L
    Righini, M
    Selci, S
    Bruni, MR
    Schiumarini, D
    Simeone, MG
    MICROELECTRONIC ENGINEERING, 1998, 43-4 : 259 - 263
  • [35] DEFECTS IN INXGA1-XAS/GAAS STRAINED QUANTUM-WELLS
    RECHENBERG, I
    BUGGE, F
    HOPNER, A
    KLEIN, A
    RICHTER, U
    DEFECT RECOGNITION AND IMAGE PROCESSING IN SEMICONDUCTORS AND DEVICES, 1994, (135): : 327 - 330
  • [36] InxGa1-xAs/GaAs Quantum Rings Grown by Droplet Epitaxy
    Pankaow, Naraporn
    Panyakeow, Somsak
    Ratanathammaphan, Somchai
    PHYSICS OF SEMICONDUCTORS: 30TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, 2011, 1399
  • [37] Photoreflectance spectroscopy of coupled InxGa1-xAs/GaAs quantum wells
    Sek, G
    Ryczko, K
    Kubisa, M
    Misiewicz, J
    Bayer, M
    Wang, T
    Koeth, J
    Forchel, A
    THIN SOLID FILMS, 2000, 364 (1-2) : 220 - 223
  • [38] INTENSITY VARIATION OF PHOTOLUMINESCENCE IN INXGA1-XAS/GAAS MULTI-QUANTUM-WELL STRUCTURES
    PIAO, ZS
    JEON, HI
    CHA, SS
    LIM, KY
    SUH, EK
    LEE, HJ
    APPLIED PHYSICS LETTERS, 1994, 65 (03) : 333 - 335
  • [39] Thermally assisted tunneling processes in InxGa1-xAs/GaAs quantum-dot structures
    Gonschorek, Marcus
    Schmidt, Heidemarie
    Bauer, Jens
    Benndorf, Gabriele
    Wagner, Gerald
    Cirlin, Georgii E.
    Grundmann, Marius
    PHYSICAL REVIEW B, 2006, 74 (11):
  • [40] PLANAR CHANNELING IN GAAS INXGA1-XAS GAAS STRAINED-LAYER STRUCTURES
    STEVENS, JLE
    ROBINSON, BJ
    DAVIES, JA
    THOMPSON, DA
    JACKMAN, TE
    JOURNAL OF APPLIED PHYSICS, 1989, 65 (04) : 1510 - 1515
12345