TUNNEL BREAKDOWN IN P-N JUNCTIONS AND GENERATION OF MICROWAVE OSCILLATIONS

被引：0

作者：

ALADINSK.VK

机构：

来源：

SOVIET PHYSICS SEMICONDUCTORS-USSR | 1968年 / 2卷 / 05期

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中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：517 / &

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[1] TUNNEL BREAKDOWN IN SIC P-N JUNCTIONS
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[4] EXPERIMENTAL INVESTIGATION OF BREAKDOWN IN GERMANIUM P-N JUNCTIONS IN A MICROWAVE ELECTRIC FIELD
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[6] FORMATION OF BREAKDOWN IN SILICON P-N JUNCTIONS
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[7] Electric breakdown in GaN p-n junctions
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[J]. APPLIED PHYSICS LETTERS, 1996, 68 (02) : 229 - 231
[8] EDGE BREAKDOWN OF P-N JUNCTIONS IN GERMANIUM
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[9] EFFECT OF DISLOCATIONS ON BREAKDOWN IN SILICON P-N JUNCTIONS
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[10] AVALANCHE BREAKDOWN OF DIFFUSED SILICON P-N JUNCTIONS
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