SURFACE KINETIC CONSIDERATIONS FOR MOLECULAR-BEAM EPITAXY GROWTH OF HIGH-QUALITY INVERTED HETEROINTERFACES

被引：4
|
作者：
NEWMAN, PG [1 ]
CHO, NM [1 ]
KIM, DJ [1 ]
MADHUKAR, A [1 ]
SMITH, DD [1 ]
AUCOIN, TR [1 ]
IAFRATE, GJ [1 ]
机构：
[1] UNIV SO CALIF,DEPT MAT SCI,LOS ANGELES,CA 90089
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1988年 / 6卷 / 04期
关键词：
D O I：
10.1116/1.584201
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1483 / 1486
页数：4
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