ANNEALING OF 10 MEV ELECTRON DAMAGE IN SILICON

被引：4

|

作者：

BASS, RF

CURTIS, OL

机构：

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1968年 / NS15卷 / 06期

关键词：

D O I：

10.1109/TNS.1968.4325030

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：47 / +

页数：1

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