EXHAUSTIVE SELF-TESTING OF LSI CIRCUITS WITH AN LSSD STRUCTURE

被引：0
|
作者：
YARMOLIK, VN
KALOSHA, EP
机构：
来源：
SOVIET MICROELECTRONICS | 1988年 / 17卷 / 02期
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D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
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页码：56 / 61
页数：6
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