共 50 条
- [44] PHOTOCAPACITANCE EFFECT IN ZNXCD1-XTE-INSB STRUCTURES PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1986, 93 (02): : K201 - K203
- [45] EMF, induced in a system of illuminated charge- coupled MIS structures due to surface recombination modulation Mikroelektronika, 1993, (01): : 87 - 95
- [46] Admittance Investigation of MIS Structures with HgTe-Based Single Quantum Wells NANOSCALE RESEARCH LETTERS, 2016, 11 : 1 - 4
- [47] INVESTIGATION OF RECOMBINATION OF NONEQUILIBRIUM CARRIERS IN SILICON BY MICROWAVE METHOD SOVIET PHYSICS SEMICONDUCTORS-USSR, 1984, 18 (12): : 1347 - 1350
- [48] An Investigation into the Admittance of MIS-Structures Based on MBE HgCdTe with Quantum Wells Russian Physics Journal, 2013, 56 : 778 - 784
- [50] Admittance Investigation of MIS Structures with HgTe-Based Single Quantum Wells Nanoscale Research Letters, 2016, 11