共 50 条
- [1] An Investigation into the Admittance of MIS-Structures Based on MBE HgCdTe with Quantum Wells Russian Physics Journal, 2013, 56 : 778 - 784
- [2] Admittance Investigation of MIS Structures with HgTe-Based Single Quantum Wells NANOSCALE RESEARCH LETTERS, 2016, 11 : 1 - 4
- [3] Admittance Investigation of MIS Structures with HgTe-Based Single Quantum Wells Nanoscale Research Letters, 2016, 11
- [5] Investigation of Characteristics of MIS Structures Based on MBE n-HgCdTe NBνN Barrier Structures by Admittance Spectroscopy Journal of Communications Technology and Electronics, 2023, 68 : 1036 - 1039
- [6] The investigation of admittance of MIS-structures based on graded-gap MBE n-HgCdTe (x = 0.22-0.23 and 0.31-0.32) in wide temperature range Applied Physics, 2014, (04): : 56 - 61
- [7] Admittance of MIS-Structures Based on HgCdTe with a Double-Layer CdTe/Al2O3 Insulator Russian Physics Journal, 2018, 60 : 1853 - 1863
- [9] Investigation of MIS-structures with hing capacitance per unit area on InSb and HgCdTe semiconductors Poverkhnost Fizika Khimiya Mekhanika, (06): : 80 - 85